Radiation-Resistant Memory Device Based on Chalcogenide Glassy Semiconductor
نویسندگان
چکیده
منابع مشابه
Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films
587 Abstract— The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.
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ژورنال
عنوان ژورنال: Visnyk NTUU KPI Seriia - Radiotekhnika Radioaparatobuduvannia
سال: 2020
ISSN: 2310-0389,2310-0397
DOI: 10.20535/radap.2020.80.79-84